View MMBT3904_4573476.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

MMBT3904
SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN)
FEATURES
* Power dissipation PCM 0.2 W(Tamb=25OC) * Collector current ICM 0.2 A * Collector-base voltage V(BR)CBO: 60 V * Operating and storage junction temperature range TJ,Tstg: -55OCto+150OC
SOT-23
COLLECTOR 3
MECHANICAL DATA
* * * * *
Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any Weight: 0.008 gram
1 BASE
2 EMITTER
0.006(0.15) 0.003(0.08)
0.055(1.40) 0.047(1.20)
0.043(1.10) 0.035(0.90) 0.020(0.50) 0.012(0.30) 0.004(0.10) 0.000(0.00)
0.020(0.50) 0.012(0.30)
0.100(2.55) 0.089(2.25)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%.
0.019(2.00) 0.071(1.80)
1
3 0.110(2.80) 2
0.118(3.00)
Dimensions in inches and (millimeters) MAXIMUM RATINGES ( @ TA = 25 C unless otherwise noted ) RATINGS
O Max. Steady State Power Dissipation (1) @TA=25oC Derate above 25 C
o
SYMBOL PD TJ TSTG
VALUE 300 150 -55 to +150
UNITS mW
o o
Max. Operating Temperature Range Storage Temperature Range
C C
ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted ) CHARACTERISTICS Thermal Resistance Junction to Ambient Notes : 1.Alumina=0.4*0.3*0.024in.99.5% alumina 2." Fully ROHS Compliant "," 100% Sn plating (Pb-free)". SYMBOL R qJA MIN. TYP. MAX. 417 UNITS
o
C/W
2007-5
ELECTRICAL CHARACTERISTICS (@TA=25OC unless otherwise noted) Characteristic OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (I C = 1mAdc, I B = 0) Collector-Base Breakdown Voltage (I C = 10uAdc, I E = 0) Emitter-Base Breakdown Voltage (I E = 100uAdc, I C = 0) Base Cutoff Current (V CE = 30Vdc, V EB = 3.0Vdc) Collector Cutoff Current (V CE = 30Vdc, V EB = 3.0Vdc) V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX 40 60 6.0 50 50 Vdc Vdc Vdc nAdc nAdc
Symbol
Min
Max
Unit
ON CHARACTERISTICS(1)
DC Current Gain (I C = 0.1mAdc, V CE = 1.0Vdc) (I C = 1.0mAdc, V CE = 1.0Vdc) (I C = 10mAdc, V CE = 1.0Vdc) (I C = 50mAdc, V CE = 1.0Vdc) (I C = 100mAdc, V CE = 1.0Vdc) Collector-Emitter Saturation Voltage (I C = 10mAdc, I B = 1.0mAdc) (I C = 50mAdc, I B = 5.0mAdc) Base-Emitter Saturation Voltage (I C = 10mAdc, I B = 1.0mAdc) (I C = 50mAdc, I B = 5.0mAdc) VCE(sat) hFE 40 70 100 60 30 0.65 300 0.2 0.3 0.85 0.95 Vdc -
VBE(sat)
Vdc
SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product (I C = 10mAdc, V CE = 20Vdc, f= 100MHz) Output Capacitance (V CB = 5.0Vdc, I E = 0, f= 1.0MHz) Input Capacitance (V EB = 0.5Vdc, I C = 0, f= 1.0MHz) Input lmpedance (V CE = 10Vdc, I C = 1.0mAdc, f= 1.0kHz) Voltage Feedback Ratio (V CE = 10Vdc, I C = 1.0mAdc, f= 1.0kHz) Small-Signal Current Gain (V CE = 10Vdc, I C = 1.0mAdc, f= 1.0kHz) Output Admittance (V CE = 10Vdc, I C = 1.0mAdc, f= 1.0kHz) Noise Figure (V CE = 5.0Vdc, I C = 100uAdc, R S = 1.0kohms, f= 1.0kHz) fT Cobo Cibo hie hre hfe hoe NF 300 1.0 0.5 100 1.0 4.0 8.0 10 8.0 400 40 5.0 MHz pF pF kohms X 10 -4 umhos dB
SWITCHING CHARACTERISTICS
Delay Time Rise Time Storage Time Fall Time (V CC = 3.0Vdc, V BE = -0.5Vdc, I C = 10mAdc, I B1 = 1.0mAdc) td tr ts tf 35 35 200 50 ns ns
(V CC = 3.0Vdc, I C = 10mAdc, I B1 = I B2 = 1.0mAdc)
< < Note : Pulse Test: Pulse Width-300ms,Duty Cycle-2.0%
RATING AND CHARACTERISTICS CURVES ( MMBT3904 )
- TJ= 25
10 7.0
O
C
-5000 3000 2000
TJ=125 C
O
VCC=40V IC=IB =10
CAPACITANCE (PF)
Q, CHARGE (pC)
5.0
3.0 2.0
Cibo
1000 700 500 300 200 100 70 50
Cobo
QT QA
1.0
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30 40
1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
200
REVERSE BIAS VOLTAGE ( V)
IC, COLLECTOR CURRENT (mA)
Figure 1. Capacitance
500 300 200 100 70 50 30 20 10 7 5
Figure 2. Charge Data
IC/IB =10
500 300 200
VCC=40V IC=IB=10
tr, RISE TIME (ns)
TIME (ns)
tr@VCC=3.0V
100 70 50 30 20 10
40V 15V td@VOB=0 V 1.0 2.0 3.0 5.0 7.0 10 20 30
IC, COLLECTOR CURRENT (mA)
2.0V 50 70 100 200
7 5
1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
200
IC, COLLECTOR CURRENT (mA)
Figure 3. Turn-On Time
500 300 200 IC/IB =20 100 70 50 30 20 10 7 5
Figure 4. Rise Time
t's=ts-1/8tf IB1=IB2 tf, FALL TIME (ns)
500 300 200 100 70 50 30 20 10
t's, STORAGE TIME (ns)
IC/IB =10
VCC=40V IB1=IB2 IC/IB =20
IC/IB =20 IC/IB =10
IC/IB =10
1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
200
7 5
1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
200
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 5. Storage Time
Figure 6. Fall Time
RATING AND CHARACTERISTICS CURVES ( MMBT3904 )
12 14
NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
10 8 6 4 2 0 0.1
SOURCE RESISTANCE=200W IC=1.0mA SOURCE RESISTANCE=200W IC=0.5mA SOURCE RESISTANCE=1.0k IC= 50uA
12 10 8 6 4 2
f = 1.0 kHz I =1.0mA C IC=0.5mA
IC= 50uA IC= 100uA
SOURCE RESISTANCE=500W IC= 100uA 0.2 0.4 1.0 2.0 4.0 10 20 40 100
f, FREQUENCY (KHz)
0
0.1
0.2
0.4
1.0
2.0
4.0
10
20
40
100
RS, SOURCE RESISTANCE (KOHMS)
Figure 7.
hoe, OUTPUT ADMITTANCE (umhos)
300 100 50 20 10 5 2 1
Figure 8.
hfe, CURRENT GAIN
200
100 70 50
30 0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT(mA)
Figure 9. Current Gain
hre, VOLTAGE FEEDBACK RATIO (X 10-4)
20 10 7.0 5.0 3.0 2.0
Figure 10. Output Admittance
hie, INPUT IMPEDANCE (KOHMS)
10 5.0 2.0 1.0 0.5 0.2 0.1
1.0 0.7 0.5 0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 11. Input Impedance
Figure 12.Voltage Feedback Ratio
RATING AND CHARACTERISTICS CURVES ( MMBT3904 )
hFE, DC CURRENT GAIN (NORMALIZED)
2.0
TJ=+125OC
1.0 0.7 0.5 0.3 0.2
VCE =1.0V
+25OC
-55OC
0.1 0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
200
Figure 13.DC Current Gain
VCE, COLLECTOR EMITTER VOLTAGE (V)
1.0
IC, COLLECTOR CURRENT (mA)
TJ=25OC
0.8 0.6 0.4 0.2 0 0.01
IC=1.0 mA
10 mA
30 mA
100 mA
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
IB, BASE CURRENT (mA)
Figure 14.Collector Saturation Region
1.2 1.0
TJ=25OC
1.0
VBE (sat) @ IC/IB=10 COEFFICIENT (mV/OC)
0.5 0 -0.5 -1.0 -1.5 qVB FOR VBE(sat) qVC FOR VCE(sat)
+25 C TO+125 C -55 C TO+25 C
O O
O
O
V, VOLTAGE (V)
0.8
VBE @ VCE=1.0V
0.6 0.4 0.2 0
-55 C TO+25 C +25 C TO+125 C
O O
O
O
VCE (sat) @ IC/IB=10
1.0
2.0
5.0
10
20
50
100
200
-2.0
0
20
40
60
80
100
120 140
160
180 200
IC,COLLECTOR CURRENT(mA)
IC, COLLECTOR CURRENT (mA)
Figure 15."ON" Voltages
Figure 16.Temperature Coefficients
DISCLAIMER NOTICE
Rectron Inc reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. Rectron Inc or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on RECTRON data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. Rectron Inc does not assume any liability arising out of the application or use of any product or circuit. Rectron products are not designed, intended or authorized for use in medical, life-saving implant or other applications intended for life-sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of Rectron Inc. Customers using or selling Rectron components for use in such applications do so at their own risk and shall agree to fully indemnify Rectron Inc and its subsidiaries harmless against all claims, damages and expenditures.

▲Up To Search▲

Price & Availability of MMBT3904

	To Download MMBT3904 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .